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| v02.1202 MICROWAVE CORPORATION HMC406MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz Features Gain: 17 dB Saturated Power: +29 dBm 38% PAE Supply Voltage: +5.0 V Power Down Capability Low External Part Count 8 AMPLIFIERS - SMT Typical Applications This amplifier is ideal for use as a driver amplifier for 5.0 - 6.0 GHz applications: * UNII * HiperLAN & 802.11a WLAN Functional Diagram General Description The HMC406MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5.0 and 6.0 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 17 dB of gain and +29 dBm of saturated power at 38% PAE from a +5.0V supply voltage. Vpd can be used for full power down or RF output power/current control. Electrical Specifications, TA = +25 C, Vs = 5V, Vpd = 5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed Vpd = 0V/5V Vpd = 5V tON, tOFF 34 21 13 Min. Typ. 5.0 - 6.0 16 0.03 10 8 24 27 38 6.0 0.002 / 300 7 35 34 24 21 0.04 14 Max. Min. Typ. 5.7 - 5.9 17 0.03 11 9 27 29 38 6.0 0.002 / 300 7 35 21 0.04 Max. Units GHz dB dB/ C dB dB dBm dBm dBm dB mA mA ns 8 - 142 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.1202 MICROWAVE CORPORATION HMC406MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz Broadband Gain & Return Loss 20 15 10 Gain vs. Temperature 22 20 18 8 AMPLIFIERS - SMT 8 - 143 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 3 4 5 S21 16 GAIN (dB) S11 S22 14 12 10 8 6 4 2 +25 C +85 C -40 C 6 7 8 0 4.5 5 5.5 FREQUENCY (GHz) 6 6.5 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 -5 Output Return Loss vs. Temperature 0 +25 C +85 C -40 C RETURN LOSS (dB) -10 -15 -20 +25 C RETURN LOSS (dB) 6.5 -5 -10 -25 -30 4.5 +85 C -40 C 5 5.5 FREQUENCY (GHz) 6 -15 4.5 5 5.5 FREQUENCY (GHz) 6 6.5 P1dB vs. Temperature 34 32 30 28 Psat vs. Temperature 34 32 30 28 P1dB (dBm) 26 24 22 20 18 16 14 4.5 5 5.5 FREQUENCY (GHz) 6 6.5 +25 C +85 C -40 C Psat (dBm) 26 24 22 20 18 16 14 4.5 5 5.5 FREQUENCY (GHz) 6 6.5 +25 C +85 C -40 C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.1202 HMC406MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz 8 AMPLIFIERS - SMT Power Compression @ 5.8 GHz 42 Output IP3 vs. Temperature 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 4.5 Pout (dBm), GAIN (dB), PAE (%) 36 30 24 18 12 6 0 0 2 4 6 8 10 12 14 16 18 INPUT POWER (dBm) OIP3 (dBm) Pout (dBm) Gain (dB) PAE (%) +25 C +85 C -40 C 5 5.5 FREQUENCY (GHz) 6 6.5 Noise Figure vs. Temperature 10 9 8 Gain & Power vs. Supply Voltage 24 23 22 21 32 31 30 29 28 27 26 25 Gain P1dB Psat NOISE FIGURE (dB) P1dB, Psat (dBm) 7 GAIN dB) +25 C +85 C -40 C 6 5 4 3 2 1 0 4.5 5 5.5 FREQUENCY (GHz) 6 6.5 20 19 18 17 16 15 14 4.75 24 23 22 5.25 5 Vcc SUPPLY VOLTAGE (Vdc) Reverse Isolation vs. Temperature 0 -10 Reverse Isolation Power Down Isolation Gain, Power & Quiescent Supply Current vs. Vpd @ 5.8 GHz 33 350 315 280 245 210 GAIN (dB), P1dB (dBm), Psat (dBm) 30 27 24 21 18 15 12 9 6 3 Gain P1dB Psat Icq ISOLATION (dB) -20 -30 -40 -50 -60 4.5 Icq (mA) 175 140 105 70 35 0 3 3.5 4 Vpd (Vdc) 4.5 5 5 5.5 FREQUENCY (GHz) 6 6.5 2.5 8 - 144 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.1202 HMC406MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) Control Voltage (Vpd) RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) Junction Temperature Continuous Pdiss (T = 85 C) (derate 32 mW/C above 85 C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +5.5 Vdc +5.5 Vdc 8 AMPLIFIERS - SMT NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. +20 dBm 150 C 2.1 W 31 C/W -65 to +150 C -40 to +85 C Outline Drawing For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 145 MICROWAVE CORPORATION v02.1202 HMC406MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz 8 AMPLIFIERS - SMT Pin Descriptions Pin Number Function Description Interface Schematic 1 Vpd Power Control Pin. For maximum power, this pin should be connected to 5.0V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 2, 4, 7 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 3 RF IN This pin is AC coupled and matched to 50 Ohms from 5.5 to 6.0 GHz. 5, 6 RF OUT RF output and bias for the output stage. The power supply for the output device needs to be supplied to these pins. 8 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required. This capacitor should be placed as close to the devices as possible. 8 - 146 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.1202 HMC406MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz Evaluation PCB 8 AMPLIFIERS - SMT List of Material Item J1 - J2 J3 C1 - C3 C4 C5 C6 L1 U1 PCB* Description PC Mount SMA RF Connector 2mm DC Header 330 pF Capacitor, 0603 Pkg. 0.6 pF Capacitor, 0603 Pkg. 1.6 pF Capacitor, 0603 Pkg. 2.2 F Capacitor, Tantalum 3.9 nH Inductor, 0603 Pkg. HMC406MS8G Amplifier 105021 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 147 MICROWAVE CORPORATION v02.1202 HMC406MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz 8 AMPLIFIERS - SMT Application Circuit TL1 TL2 50 Ohm 0.231" TL3 50 Ohm 0.1" Note 1: C3 should be located < 0.020" from Pin 8 (Vcc) Note 2: C2 should be located < 0.020" from L1. Impedance Length 50 Ohm 0.038" 8 - 148 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.1202 HMC406MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz Notes: 8 AMPLIFIERS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 149 |
Price & Availability of HMC406MS8G
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